The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 22, 2013

Filed:

Nov. 10, 2009
Applicants:

Chi-chung Chen, Hua-Lien, TW;

Wen-chen Chiang, Miaoli County, TW;

Yu-tsung Lin, Taichung County, TW;

Inventors:

Chi-Chung Chen, Hua-Lien, TW;

Wen-Chen Chiang, Miaoli County, TW;

Yu-Tsung Lin, Taichung County, TW;

Assignee:

United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01J 3/50 (2006.01); H01L 27/00 (2006.01); H01L 31/00 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for fabricating image sensor is disclosed. The method includes the steps of: providing a substrate, wherein the substrate comprises a plurality of photodiodes; forming at least one dielectric layer and a passivation layer on surface of the substrate; using a patterned photomask to perform a first pattern transfer process for forming a plurality of trenches corresponding to each photodiode in the passivation layer; forming a plurality of color filters in the trenches; covering a planarizing layer on the color filters; and using the patterned photomask to perform a second pattern transfer process for forming a plurality of microlenses corresponding to each color filter on the planarizing layer.


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