The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 22, 2013

Filed:

Oct. 22, 2008
Applicants:

Naoki Yamada, Tokyo, JP;

Atsuya Yoshinaka, Tokyo, JP;

Senji Wada, Tokyo, JP;

Inventors:

Naoki Yamada, Tokyo, JP;

Atsuya Yoshinaka, Tokyo, JP;

Senji Wada, Tokyo, JP;

Assignee:

Adeka Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C07F 7/00 (2006.01); C23C 16/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A novel metal compound of general formula (1), a material for chemical vapor phase growth containing the compound, and a process for forming a metal-containing thin film by chemical vapor phase growth using the material. Among the compounds of formula (1), those wherein X is a chlorine atom are preferred because of inexpensiveness and high volatility. When M is titanium, those wherein m is 1 are preferred as having a greater difference between a volatilization temperature (vapor temperature) and a deposition temperature (reaction temperature), which provides a broader process margin. In formula (1), M is titanium, zirconium, or hafnium; X is a halogen atom; and m is 1 or 2.


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