Ion source and plasma processing apparatus

Abstract

It is an object of this invention to provide an ion source and a plasma processing apparatus capable of generating stable and long-life plasma. The ion source is provided with a high-frequency antenna () installed on the outer peripheral side of a partition wall () made of a dielectric material and partitioning a plasma generating chamber () and a shield body () made of a dielectric material and preventing deposition on the inner peripheral surface of the partition wall () facing the high-frequency antenna () inside the plasma generating chamber (). The structure made of a dielectric material can prevent an increase in high-frequency power required for inductive coupling with plasma. The shield body () is formed with a slot () in a direction crossing a winding direction of the high-frequency antenna (). Since this arrangement can prevent continuous deposition on the inner surface of the partition wall in the winding direction of the high-frequency antenna, an induction loss between the high-frequency antenna and the plasma generating chamber can be effectively prevented even if the deposited film is made of a conductive material.