The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 2013
Filed:
Jan. 29, 2008
Satoru Okamoto, Kanagawa, JP;
Koji Okazaki, Kanagawa, JP;
Shuuichi Kojima, Kanagawa, JP;
Nobuo Yoshida, Kanagawa, JP;
Katsuro Watanabe, Ibaraki, JP;
Hiroyuki Katada, Kanagawa, JP;
Satoru Okamoto, Kanagawa, JP;
Koji Okazaki, Kanagawa, JP;
Shuuichi Kojima, Kanagawa, JP;
Nobuo Yoshida, Kanagawa, JP;
Katsuro Watanabe, Ibaraki, JP;
Hiroyuki Katada, Kanagawa, JP;
Hitachi Global Storage Technologies Netherlands B.V., Amsterdam, NL;
Abstract
Embodiments of the present invention help to prevent a head characteristic from being deteriorated by re-deposition or damage which occurs when a sensor film is etched, a track width is narrowed, and the head characteristic is stabilized. According to one embodiment, when it is assumed that the thickness of the sensor film on an air bearing surface is T, and a distance between an end of a medium layer that is interposed between a free layer and a pinned layer which comprise the sensor film and an end of the sensor film lowest portion, a relationship of 1.2×T≦X≦2.5×T is satisfied, and the ends of a pair of magnetic films which are in contact with both sides in the track-width direction through an insulator do not exist in the track central portion from the free layer end. The sensor film is etched while an incident angle of an etching beam is changed over, and when it is assumed that a direction normal to the sensor film surface is the incident angle of 0, etching is conducted under the condition where the incident angle of the etching beam becomes smaller with time.