The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 2013
Filed:
Aug. 25, 2006
Satoshi Moriya, Akishima, JP;
Toshio Saito, Akiruno, JP;
Goichi Yokoyama, Iruma, JP;
Tsuyoshi Fujiwara, Hamura, JP;
Hidenori Sato, Ome, JP;
Nobuaki Miyakawa, Wako, JP;
Satoshi Moriya, Akishima, JP;
Toshio Saito, Akiruno, JP;
Goichi Yokoyama, Iruma, JP;
Tsuyoshi Fujiwara, Hamura, JP;
Hidenori Sato, Ome, JP;
Nobuaki Miyakawa, Wako, JP;
Hitachi, Ltd., Tokyo, JP;
Honda Motor Co., Ltd., Tokyo, JP;
Abstract
A structure obtaining a desired integrated circuit by sticking together a plurality of semiconductor substrates and electrically connecting integrated circuits formed on semiconductor chips of the respective semiconductor substrates is provided, and a penetrating electrode penetrating between a main surface and a rear surface of each of the semiconductor substrates and a penetrating separation portion separating the penetrating electrode are separately arranged. Thereby, after forming an insulation trench portion for formation of the penetrating separation portion on the semiconductor substrate, a MIS•FET is formed, and then, a conductive trench portion for formation of the penetrating electrode can be formed. Therefore, element characteristics of a semiconductor device having a three-dimensional structure can be improved.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile