The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 2013
Filed:
Jul. 02, 2010
Hsueh I Huang, Lin-Yuan Township, Kaohsiung County, TW;
Ming-tung Lee, Longtan Shiang, TW;
Shyi-yuan Wu, Hsinchu, TW;
Hsueh I Huang, Lin-Yuan Township, Kaohsiung County, TW;
Ming-Tung Lee, Longtan Shiang, TW;
Shyi-Yuan Wu, Hsinchu, TW;
Macronix International Co., Ltd., Hsin-Chu, TW;
Abstract
A semiconductor device for use in a relatively high voltage application that comprises a substrate, a first n-type well region in the substrate to serve as a high voltage n-well (HVNW) for the semiconductor device, a pair of second n-type well regions in the first n-type well region, a p-type region in the first n-type well region between the second n-type well regions, a pair of conductive regions on the substrate between the second n-type well regions, and a number of n-type regions to serve as n-type buried layers (NBLs) for the semiconductor device, wherein the NBLs are located below the first n-type region and dispersed in the substrate.