The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 2013
Filed:
Mar. 08, 2010
Takahisa Kanemura, Yokohama, JP;
Tomomi Kusaka, Yokohama, JP;
Takashi Izumida, Yokohama, JP;
Masaki Kondo, Kawasaki, JP;
Nobutoshi Aoki, Yokohama, JP;
Takahisa Kanemura, Yokohama, JP;
Tomomi Kusaka, Yokohama, JP;
Takashi Izumida, Yokohama, JP;
Masaki Kondo, Kawasaki, JP;
Nobutoshi Aoki, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor memory device according to an embodiment of the present invention includes a substrate, a first gate insulator formed on the substrate and serving as an F-N (Fowler-Nordheim) tunneling film, a first floating gate formed on the first gate insulator, a second gate insulator formed on the first floating gate and serving as an F-N tunneling film, a second floating gate formed on the second gate insulator, an intergate insulator formed on the second floating gate and serving as a charge blocking film, and a control gate formed on the intergate insulator, at least one of the first and second floating gates including a metal layer.