The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 2013
Filed:
Aug. 29, 2008
David Brunco, Hillsboro, OR (US);
Marc Meuris, Keerbergen, BE;
David Brunco, Hillsboro, OR (US);
Marc Meuris, Keerbergen, BE;
IMEC, Leuven, BE;
Abstract
The present invention is related to the field of semiconductor processing and, more particularly, to the formation of low resistance layers on germanium substrates. One aspect of the present invention is a method comprising: providing a substrate on which at least one area of a germanium layer is exposed; depositing over the substrate and said germanium area a metal, e.g., Co or Ni; forming over said metal, a capping layer consisting of a silicon oxide containing layer, of a silicon nitride layer, or of a tungsten layer, preferably of a SiOlayer; then annealing for metal-germanide formation; then removing selectively said capping layer and any unreacted metal, wherein the temperature used for forming said capping layer formation is lower than the annealing temperature.