The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 2013
Filed:
Aug. 20, 2010
Tsutomu Komatani, Kanagawa, JP;
Tsutomu Komatani, Kanagawa, JP;
Sumitomo Electric Device Innovations, Inc., Yokohama-shi, Kanagawa, JP;
Abstract
The present invention is a method for fabricating a semiconductor device including the steps of: a first silicon nitride film having a refractive index of 2.2 or higher on a semiconductor layer made of a GaN- or InP-based semiconductor; forming, on the first silicon nitride film, a second silicon nitride film having a refractive index lower than that of the first silicon nitride; forming a source electrode and a drain electrode in areas in which the semiconductor layer is exposed; annealing the source electrode and the drain electrode in a state in which the first silicon nitride film and the second silicon nitride film are formed; and forming a gate electrode on the semiconductor layer between the source electrode and the drain electrode.