The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2013
Filed:
Dec. 29, 2009
Kun-szu Tseng, Tainan County, TW;
Cheng-wen Fan, Tainan County, TW;
Chih-yu Tseng, Hsinchu, TW;
Victor Chiang Liang, Hsinchu, TW;
Kun-Szu Tseng, Tainan County, TW;
Cheng-Wen Fan, Tainan County, TW;
Chih-Yu Tseng, Hsinchu, TW;
Victor Chiang Liang, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A semiconductor device including a substrate, a first device, a second device and an interlayer dielectric layer is provided. The substrate has a first area and a second area. The first device is disposed in the first area of the substrate and includes a first dielectric layer on the substrate and a metal gate on the first dielectric layer. The second device is in the second area of the substrate and includes a second dielectric layer on the substrate and, a polysilicon layer on the second dielectric layer. It is noted that the height of the polysilicon layer is less than that of the metal gate of the first device. The interlayer dielectric layer covers the second device.