The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2013
Filed:
Apr. 13, 2010
Takashi Ishigaki, Hino, JP;
Ryuta Tsuchiya, Tokyo, JP;
Yusuke Morita, Akishima, JP;
Nobuyuki Sugii, Tokyo, JP;
Takashi Ishigaki, Hino, JP;
Ryuta Tsuchiya, Tokyo, JP;
Yusuke Morita, Akishima, JP;
Nobuyuki Sugii, Tokyo, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
Characteristics of a semiconductor device having a FINFET are improved. The FINFET has: a channel layer arranged in an arch shape on a semiconductor substrate and formed of monocrystalline silicon; a front gate electrode formed on a part of an outside of the channel layer through a front gate insulating film; and a back gate electrode formed so as to be buried inside the channel layer through a back gate insulating film. The back gate electrode arranged inside the arch shape is arranged so as to pass through the front gate electrode.