The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2013
Filed:
Dec. 22, 2010
Yoshiyuki Kaneko, Kanagawa, JP;
Hiroyasu Noso, Kanagawa, JP;
Katsuhiko Hotta, Kanagawa, JP;
Shinichi Ishida, Kanagawa, JP;
Hidenori Suzuki, Kanagawa, JP;
Sadayoshi Tateishi, Kanagawa, JP;
Yoshiyuki Kaneko, Kanagawa, JP;
Hiroyasu Noso, Kanagawa, JP;
Katsuhiko Hotta, Kanagawa, JP;
Shinichi Ishida, Kanagawa, JP;
Hidenori Suzuki, Kanagawa, JP;
Sadayoshi Tateishi, Kanagawa, JP;
Renesas Electronics Corporation, Kawasaki-shi, JP;
Abstract
The present invention provides a technology capable of providing a semiconductor device having an MIM structure capacitor with improved reliability. The capacitor has a lower electrode, a capacitor insulating film, and an upper electrode. The lower electrode is comprised of a metal film embedded in an electrode groove formed in an insulating film over the main surface of a semiconductor substrate; and the upper electrode is comprised of a film stack of a TiN film (lower metal film) and a Ti film (cap metal film) formed over the TiN film (lower metal film).