The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2013
Filed:
Jun. 07, 2010
Chih-min HU, Kaohsiung, TW;
Chung Yu Hung, Changhua County, TW;
Wing Chor Chan, Hsinchu, TW;
Jeng Gong, Taichung, TW;
Chih-Min Hu, Kaohsiung, TW;
Chung Yu Hung, Changhua County, TW;
Wing Chor Chan, Hsinchu, TW;
Jeng Gong, Taichung, TW;
Macronix International Co., Ltd., Hsin-Chu, TW;
Abstract
A junction-field-effect-transistor (JFET) device includes a substrate of a first-type impurity, a first well region of a second-type impurity in the substrate, a pair of second well regions of the first-type impurity separated from each other in the first well region, a third well region of the first-type impurity between the pair of second well regions, a first diffused region of the second-type impurity between the third well region and one of the second well regions, and a second diffused region of the second-type impurity between the third well region and the other one of the second well regions.