The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2013
Filed:
Nov. 22, 2011
Jeffrey P. Gambino, Westford, VT (US);
William Hill, Westford, VT (US);
Kenneth E. Mcavey, Jr., Winooski, VT (US);
Thomas L. Mcdevitt, Underhill, VT (US);
Anthony K. Stamper, Williston, VT (US);
Arthur C. Winslow, Essex Junction, VT (US);
Robert Zwonik, Colchester, VT (US);
Jeffrey P. Gambino, Westford, VT (US);
William Hill, Westford, VT (US);
Kenneth E. McAvey, Jr., Winooski, VT (US);
Thomas L. McDevitt, Underhill, VT (US);
Anthony K. Stamper, Williston, VT (US);
Arthur C. Winslow, Essex Junction, VT (US);
Robert Zwonik, Colchester, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
An integrated circuit and a method of manufacturing the integrated circuit, the method including: (a) providing a substrate; (b) forming a copper diffusion barrier layer on the substrate; (c) forming a dielectric layer on a top surface of the copper diffusion barrier layer; (d) forming a copper damascene or dual damascene wire in the dielectric layer, a top surface of the copper damascene or dual damascene wire coplanar with a top surface of the dielectric layer; (e) forming a first capping layer on the top surface of the wire and the top surface of the dielectric layer; (f) after step (e) performing one or more characterization procedures in relation to said integrated circuit; and (g) after step (e) forming a second capping layer on a top surface of the first capping layer.