The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2013
Filed:
Nov. 23, 2007
Sébastien Kerdiles, Saint-Ismier, FR;
Willy Michel, Lunel, FR;
Walter Schwarzenbach, Saint Nazaire les Eymes, FR;
Daniel Delprat, Crolles, FR;
Nadia Ben Mohamed, Echirolles, FR;
Sébastien Kerdiles, Saint-Ismier, FR;
Willy Michel, Lunel, FR;
Walter Schwarzenbach, Saint Nazaire les Eymes, FR;
Daniel Delprat, Crolles, FR;
Nadia Ben Mohamed, Echirolles, FR;
Soitec, Bernin, FR;
Abstract
The invention relates to a method of forming a structure comprising a thin layer of semiconductor material transferred from a donor substrate onto a second substrate, wherein two different atomic species are co-implanted under certain conditions into the donor substrate so as to create a weakened zone delimiting the thin layer to be transferred. The two different atomic species are implanted so that their peaks have an offset of less than 200 Å in the donor substrate, and the substrates are bonded together after roughening at least one of the bonding surfaces.