The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2013
Filed:
Mar. 08, 2011
Chung Foong Tan, Singapore, SG;
Eng Huat Toh, Singapore, SG;
Jae Gon Lee, Singapore, SG;
Sanford Chu, Singapore, SG;
Chung Foong Tan, Singapore, SG;
Eng Huat Toh, Singapore, SG;
Jae Gon Lee, Singapore, SG;
Sanford Chu, Singapore, SG;
GlobalFoundries Singapore Pte. Ltd., Singapore, SG;
Abstract
A FinFET (p-channel) device is formed having a fin structure with sloped or angled sidewalls (e.g., a pyramidal or trapezoidal shaped cross-section shape). When using conventional semiconductor substrates having a (100) surface orientation, the fin structure is formed in a way (groove etching) which results in sloped or angled sidewalls having a (111) surface orientation. This characteristic substantially increases hole mobility as compared to conventional fin structures having vertical sidewalls.