The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2013
Filed:
Dec. 23, 2010
Sanh D. Tang, Boise, ID (US);
Gordon A. Haller, Boise, ID (US);
Prashant Raghu, Boise, ID (US);
Ravi Iyer, Boise, ID (US);
Sanh D. Tang, Boise, ID (US);
Gordon A. Haller, Boise, ID (US);
Prashant Raghu, Boise, ID (US);
Ravi Iyer, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A transistor gate forming method includes forming a metal layer within a line opening and forming a fill layer within the opening over the metal layer. The fill layer is substantially selectively etchable with respect to the metal layer. A transistor structure includes a line opening, a dielectric layer within the opening, a metal layer over the dielectric layer within the opening, and a fill layer over the metal layer within the opening. The metal layer/fill layer combination exhibits less intrinsic less than would otherwise exist if the fill layer were replaced by an increased thickness of the metal layer. The inventions apply at least to 3-D transistor structures.