The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2013
Filed:
May. 02, 2012
Cheng-wen Fan, Hsinchu County, TW;
Kun-szu Tseng, Pingtung County, TW;
Che-hua Hsu, Hsin-Chu Hsien, TW;
Chih-yu Tseng, Hsinchu, TW;
Victor-chiang Liang, Hsin-Chu, TW;
Cheng-Wen Fan, Hsinchu County, TW;
Kun-Szu Tseng, Pingtung County, TW;
Che-Hua Hsu, Hsin-Chu Hsien, TW;
Chih-Yu Tseng, Hsinchu, TW;
Victor-Chiang Liang, Hsin-Chu, TW;
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
An integrated method includes fabricating a metal gate transistor and a polysilicon resistor structure. A photoresistor layer is defined by an SAB photo mask and covers a part of a high resistance structure of the polysilicon resistor. When the dummy gate of the transistor is etched, the part of the high resistance structure is protected by the patterned photoresistor layer. The polysilicon resistor is formed simultaneously with the transistor. Furthermore, the polysilicon resistor still has sufficient resistance and includes two metal structures for electrical connection.