The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2013
Filed:
Mar. 23, 2010
Zhiyong LI, Los Altos, CA (US);
David Tanner, San Jose, CA (US);
Gopalakrishna Prabhu, San Jose, CA (US);
Mohamed H. Hilali, Sunnyvale, CA (US);
Zhiyong Li, Los Altos, CA (US);
David Tanner, San Jose, CA (US);
Gopalakrishna Prabhu, San Jose, CA (US);
Mohamed H. Hilali, Sunnyvale, CA (US);
GTAT Corporation, Nashua, NH (US);
Abstract
A novel method is described to create low-relief texture at a light-facing surface or a back surface of a photovoltaic cell. The peak-to-valley height and average peak-to-peak distance of the textured surface is less than about 1 microns, for example less than about 0.8 micron, for example about 0.5 microns or less. In a completed photovoltaic device, average reflectance for light having wavelength between 375 and 1010 nm at a light-facing surface with this texture is 6 percent or less, for example about 5 percent or less, in some instances about 3.5 percent. This texture is produced by forming an optional oxide layer at the surface, lightly buffing the surface, and etching with a crystallographically selective etch. Excellent texture may be produced by etching for as little as twelve minutes or less. Very little silicon, for example about 0.3 mg/cmor less, is lost at the textured surface during this etch.