The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2013
Filed:
Nov. 14, 2006
Pere Roca I Cabarrocas, Villebon sur Yvette, FR;
Pavel Bulkin, Villebon sur Yvette, FR;
Dmitri Daineka, Palaiseau, FR;
Thien Hai Dao, Palaiseau, FR;
Patrick Leempoel, Brussels, BE;
Pierre Descamps, Rixensart, BE;
Thibault Kervyn DE Meerendre, Brussels, BE;
Pere Roca I Cabarrocas, Villebon sur Yvette, FR;
Pavel Bulkin, Villebon sur Yvette, FR;
Dmitri Daineka, Palaiseau, FR;
Thien Hai Dao, Palaiseau, FR;
Patrick Leempoel, Brussels, BE;
Pierre Descamps, Rixensart, BE;
Thibault Kervyn De Meerendre, Brussels, BE;
Ecole Polytechnique, Palaiseau, FR;
Dow Corning Corporation, Midland, MI (US);
Abstract
A method is described for forming a film of amorphous silicon (a-Si:H) on a substrate by deposition from a plasma. The substrate is placed in an enclosure, a film precursor gas is introduced into the enclosure, and unreacted and dissociated gas is extracted from the enclosure so as to provide a low pressure in the enclosure. Microwave energy is introduced into the gas within the enclosure to produce a plasma therein by distributed electron cyclotron resonance (DECR) and cause material to be deposited from the plasma on the substrate. The substrate is held during deposition at a temperature in the range 200-600° C., preferably 225-350° C. and a bias voltage is applied to the substrate at a level to give rise to a sheath potential in the range −30 to −105V, preferably using a source of RF power in the range of 50-250 mW/cm2 of the area of the substrate holder.