The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2013
Filed:
Sep. 30, 2009
Kyoung-wook Seok, Milpitas, CA (US);
Vladimir Tsukanov, Palo Alto, CA (US);
Kyoung-Wook Seok, Milpitas, CA (US);
Vladimir Tsukanov, Palo Alto, CA (US);
IXYS Corporation, Milpitas, CA (US);
Abstract
A trench structure of an insulated gate bipolar transistor (IGBT) is formed as a trench net in a P region and extends into an N− layer. The trench net separates the P region into P wells and floating P layers. The P wells contact an emitter electrode while the floating P layers are not in direct contact with the emitter electrode. A gate formed of conductive material and having a surrounding insulation oxide layer is formed in the trench net. An N+ layer may be formed above each floating P layer under the gate. The floating P layers are isolated from the gate and are also not connected to the emitter electrode.