The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2013
Filed:
May. 11, 2010
Ming-song Sheu, Hsinchu, TW;
Jian-hsing Lee, Hsinchu, TW;
Yu-chang Jong, Hsinchu, TW;
Chun-chien Tsai, Yongkang, TW;
Ming-Song Sheu, Hsinchu, TW;
Jian-Hsing Lee, Hsinchu, TW;
Yu-Chang Jong, Hsinchu, TW;
Chun-Chien Tsai, Yongkang, TW;
Abstract
An integrated circuit includes at least one transistor over a substrate. A first guard ring is disposed around the at least one transistor. The first guard ring has a first type dopant. A second guard ring is disposed around the first guard ring. The second guard ring has a second type dopant. A first doped region is disposed adjacent to the first guard ring. The first doped region has the second type dopant. A second doped region is disposed adjacent to the second guard ring. The second doped region has the first type dopant. The first guard ring, the second guard ring, the first doped region, and the second doped region are capable of being operable as a first silicon controlled rectifier (SCR) to substantially release an electrostatic discharge (ESD).