The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2013
Filed:
May. 28, 2009
Tetsuo Inoue, Yokohama, JP;
Hajime Takeuchi, Yokohama, JP;
Yasumasa Ooya, Chigasaki, JP;
Toshio Shimaoogi, Hiratsuka, JP;
Yasuhiro Shirakawa, Yokohama, JP;
Tetsuo Inoue, Yokohama, JP;
Hajime Takeuchi, Yokohama, JP;
Yasumasa Ooya, Chigasaki, JP;
Toshio Shimaoogi, Hiratsuka, JP;
Yasuhiro Shirakawa, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Materials Co., Ltd., Yokohama-shi, JP;
Abstract
A white light source includes: an insulating substrate; a light-emitting diode chip provided on the insulating substrate and that emits ultraviolet light with a wavelength of 330 nm to 410 nm; and a phosphor layer formed to cover the light-emitting diode chip, including a red emitting phosphor, a green emitting phosphor, and a blue emitting phosphor as a phosphor, and the phosphors are dispersed in a cured transparent resin, wherein when it is assumed that the shortest distance between a surface of the phosphor layer and a peripheral portion of the light-emitting diode chip is t(mm) and the mean free path defined by the following expression (1) is L(mm), the t and L satisfy 3.2≦t/L. [Expression/(×σ)  (1)(n: number of phosphors per unit volume of the phosphor layer (pcs/mm), and σ: average cross section area of a phosphor in the phosphor layer (mm)).