The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2013
Filed:
Oct. 29, 2008
Tomonori Matsumuro, Tsukuba, JP;
Kenji Kasahara, Tsukuba, JP;
Yukiya Nishioka, Tsukuba, JP;
Sumitomo Chemical Company, Limited, Tokyo, JP;
Abstract
The objective is to achieve an organic thin film transistor group that can be manufactured more easily and at a lower cost. Provided is a thin film active element group comprising a drive active element having a semiconductor channel layer formed in a channel region between a source electrode and a drain electrode; and a switch active element having a semiconductor channel layer formed in a channel region between a source electrode and a drain electrode, the switch active element switching the drive active element. The drive active element and the switch active element are formed to be separated from each other in a direction of a channel width such that a straight line associated with the channel region of the drive active element and a straight line associated with the channel region of the switch active element are parallel to each other. The channel region of the drive active element and the channel region of the switch active element may be aligned linearly with each other in the direction of the channel width.