The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2013
Filed:
Jun. 22, 2010
Miyako Nakajima, Kanagawa, JP;
Hidekazu Miyairi, Kanagawa, JP;
Toshiyuki Isa, Kanagawa, JP;
Erika Kato, Kanagawa, JP;
Mitsuhiro Ichijo, Kanagawa, JP;
Kazutaka Kuriki, Kanagawa, JP;
Tomokazu Yokoi, Kanagawa, JP;
Miyako Nakajima, Kanagawa, JP;
Hidekazu Miyairi, Kanagawa, JP;
Toshiyuki Isa, Kanagawa, JP;
Erika Kato, Kanagawa, JP;
Mitsuhiro Ichijo, Kanagawa, JP;
Kazutaka Kuriki, Kanagawa, JP;
Tomokazu Yokoi, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
An object is to provide a thin film transistor with small off current, large on current, and high field-effect mobility. A silicon nitride layer and a silicon oxide layer which is formed by oxidizing the silicon nitride layer are stacked as a gate insulating layer, and crystals grow from an interface of the silicon oxide layer of the gate insulating layer to form a microcrystalline semiconductor layer; thus, an inverted staggered thin film transistor is manufactured. Since crystals grow from the gate insulating layer, the thin film transistor can have a high crystallinity, large on current, and high field-effect mobility. In addition, a buffer layer is provided to reduce off current.