The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2013
Filed:
Mar. 30, 2010
Applicants:
Tung-ti Yeh, Tainan, TW;
Neng-kuo Chen, Sinshih Township, TW;
Cheng-yuan Tsai, Chu-Pei, TW;
Chung-yi Yu, Hsinchu, TW;
Chia-shiung Tsai, Hsinchu, TW;
Inventors:
Tung-Ti Yeh, Tainan, TW;
Neng-Kuo Chen, Sinshih Township, TW;
Cheng-Yuan Tsai, Chu-Pei, TW;
Chung-Yi Yu, Hsinchu, TW;
Chia-Shiung Tsai, Hsinchu, TW;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 29/02 (2006.01); H01L 47/00 (2006.01); H01L 21/06 (2006.01);
U.S. Cl.
CPC ...
Abstract
A phase change memory device and a method of manufacture are provided. The phase change memory device includes a phase change layer electrically coupled to a top electrode and a bottom electrode, the phase change layer comprising a phase change material. A mask layer is formed overlying the phase change layer. A first sealing layer is formed overlying the mask layer, and a second sealing layer is formed overlying the first sealing layer.