The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2013
Filed:
May. 27, 2010
Takashi Ando, Tuckahoe, NY (US);
Changhwan Choi, Seoul, KR;
Unoh Kwon, Fishkill, NY (US);
Vijay Narayanan, New York, NY (US);
Takashi Ando, Tuckahoe, NY (US);
Changhwan Choi, Seoul, KR;
Unoh Kwon, Fishkill, NY (US);
Vijay Narayanan, New York, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for forming a field effect transistor device includes forming an oxide layer on a substrate, forming a dielectric layer on the oxide layer, forming a first TiN layer on the dielectric layer, forming a metallic layer on the first layer, forming a second TiN layer on the metallic layer, removing a portion of the first TiN layer, the metallic layer, and the second TiN layer to expose a portion of the dielectric layer, forming a layer of stoichiometric TiN on the exposed portion of the dielectric layer and the second TiN layer, heating the device, and forming a polysilicon layer on the device.