The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2013
Filed:
Nov. 06, 2008
Chih-hao Huang, Hsinchu, TW;
Tzong-hsien Wu, Hsinchu, TW;
Chin-cheng Yang, Hsinchu, TW;
Tien-chu Yang, Hsinchu, TW;
Chih-Hao Huang, Hsinchu, TW;
Tzong-Hsien Wu, Hsinchu, TW;
Chin-Cheng Yang, Hsinchu, TW;
Tien-Chu Yang, Hsinchu, TW;
MACRONIX International Co., Ltd., Hsinchu, TW;
Abstract
The invention is directed to a method for patterning a material layer. The method comprises steps of providing a material layer. The material layer has a first hard mask layer and a second hard mask layer successively formed thereon. Then, the second hard mask layer is patterned to form a plurality of openings therein. A patterned photoresist layer is formed to cover the second hard mask layer and the patterned photoresist layer exposes a portion of the openings. The first hard mask layer with the patterned photoresist layer and the patterned second hard mask layer together as a mask. Then, the patterned photoresist layer and the patterned second hard mask layer are removed. The material layer is patterned with the patterned first hard mask layer as a mask.