The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 25, 2012

Filed:

Sep. 25, 2009
Applicants:

Yuen H. Chan, Poughkeepsie, NY (US);

Louis C. Hsu, Fishkill, NY (US);

Xu Ouyang, Hopewell Junction, NY (US);

Robert C. Wong, Hopewell Junction, NY (US);

Inventors:

Yuen H. Chan, Poughkeepsie, NY (US);

Louis C. Hsu, Fishkill, NY (US);

Xu Ouyang, Hopewell Junction, NY (US);

Robert C. Wong, Hopewell Junction, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 8/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A static random access memory (SRAM) cell includes a first read port, the first read port having a first beta ratio; and a write port, the write port having a second beta ratio that is substantially lower than the first beta ratio. A static random access memory (SRAM) array includes a plurality of SRAM cells, an SRAM cell including a first read port, the first read port having a first beta ratio; and a write port, the write port having a second beta ratio that is substantially lower than the first beta ratio.


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Chan, Yuen. (2012). Dual beta ratio sram (U.S. Patent No. 8339893). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8339893

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