The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2012
Filed:
Jul. 22, 2010
Ting-chang Chang, Kaohsiung, TW;
Te-chih Chen, Neipu Township, TW;
Fu-yen Jian, Ziguan Township, TW;
Chia-sheng Lin, Jiadong Township, TW;
Ting-Chang Chang, Kaohsiung, TW;
Te-Chih Chen, Neipu Township, TW;
Fu-Yen Jian, Ziguan Township, TW;
Chia-Sheng Lin, Jiadong Township, TW;
Acer Incorporated, Hsichih Taipei Hsien, TW;
Abstract
One embodiment of the present invention provides an operation method of a memory device. The memory device includes a source, a drain, and a channel region between the source and the drain, a gate dielectric with a charge storage layer on the channel region, and a gate on the gate dielectric, wherein the source, the drain and the channel region are located in a substrate. The operation method includes the following steps: applying a reverse bias between the gate and the drain of the memory device to generate band-to-band hot holes in the substrate near the drain; injecting the band-to-band hot holes to a drain side of the charge storage layer; and performing a program/erase operation upon the memory device. The band-to-band hot holes in the drain side of the charge storage layer are not completely vanished by the program/erase operation.