The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2012
Filed:
Jun. 04, 2009
Heng-jen Lee, Baoshan Township, Hsinchu County, TW;
Jui-chun Peng, Hsin-Chu, TW;
I-hsiung Huang, Hukou Shiang, TW;
Heng-Jen Lee, Baoshan Township, Hsinchu County, TW;
Jui-Chun Peng, Hsin-Chu, TW;
I-Hsiung Huang, Hukou Shiang, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A dual wavelength exposure system provides for patterning a resist layer formed on a wafer for forming semiconductor devices, using two exposure operations, one including a first radiation having a first wavelength and the other including a second radiation including a second wavelength. Different or the same lithography tool may be used to generate the first and second radiation. For each die formed on the semiconductor device, a critical portion of the pattern is exposed using a first exposure operation that uses a first radiation with a first wavelength and a non-critical portion of the pattern is exposed using a second exposure operation utilizing the second radiation at a second wavelength. The resist material is chosen to be sensitive to both the first radiation having a first wavelength and the second radiation having the second wavelength.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile