The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 25, 2012

Filed:

May. 14, 2008
Applicants:

Kenji Tamamori, Ebina, JP;

Masahiko Okunuki, Akiruno, JP;

Shinan Wang, Kashiwa, JP;

Taiko Motoi, Atsugi, JP;

Haruhito Ono, Minamiashigara, JP;

Toshiaki Aiba, Fujisawa, JP;

Inventors:

Kenji Tamamori, Ebina, JP;

Masahiko Okunuki, Akiruno, JP;

Shinan Wang, Kashiwa, JP;

Taiko Motoi, Atsugi, JP;

Haruhito Ono, Minamiashigara, JP;

Toshiaki Aiba, Fujisawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B29D 11/00 (2006.01); B44C 1/22 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for forming an etching mask comprises irradiating a focused ion beam onto a surface of a substrate and forming an etching mask used for oblique etching including an ion containing portion in the irradiated region. A method for fabricating a three-dimensional structure comprises preparing a substrate, irradiating a focused ion beam onto a surface of the substrate and forming an etching mask including an ion-containing portion in the irradiated region, and dry-etching the substrate from a diagonal direction using the etching mask and forming a plurality of holes.


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