The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2012
Filed:
Feb. 17, 2011
Mong-ea Lin, Hsinchu, TW;
Yao-hui Lin, Hsinchu, TW;
Chao-ming Chiu, Hsinchu, TW;
Chang-ming LU, Hsinchu, TW;
Mong-Ea Lin, Hsinchu, TW;
Yao-Hui Lin, Hsinchu, TW;
Chao-Ming Chiu, Hsinchu, TW;
Chang-Ming Lu, Hsinchu, TW;
Lextar Electronics Corporation, Hsinchu, TW;
Abstract
A light emitting diode and a fabricating method thereof are provided. A first-type semiconductor layer, a light emitting layer and a second-type semiconductor layer with a first surface are sequentially formed a substrate. Next, the first surface is treated during a surface treatment process to form a current-blocking region which extends from the first surface to the light emitting layer to a depth of 1000 angstroms. Afterward, a first electrode is formed above the current-blocking region of the second-type semiconductor layer, and a second electrode is formed to electrically contact to the first-type semiconductor layer. Since the current-blocking region is formed with a determined depth within the second-type semiconductor layer, the light extraction efficiency of the light emitting diode may be increased.