The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2012
Filed:
Jul. 07, 2011
Shinichiro Miyahara, Nisshin, JP;
Hidefumi Takaya, Toyota, JP;
Masahiro Sugimoto, Toyota, JP;
Jun Morimoto, Toyota, JP;
Yukihiko Watanabe, Nagoya, JP;
Shinichiro Miyahara, Nisshin, JP;
Hidefumi Takaya, Toyota, JP;
Masahiro Sugimoto, Toyota, JP;
Jun Morimoto, Toyota, JP;
Yukihiko Watanabe, Nagoya, JP;
DENSO CORPORATION, Kariya, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota, JP;
Abstract
A SiC semiconductor device includes a reverse type MOSFET having: a substrate; a drift layer and a base region on the substrate; a base contact layer and a source region on the base region; multiple trenches having a longitudinal direction in a first direction penetrating the source region and the base region; a gate electrode in each trench via a gate insulation film; an interlayer insulation film covering the gate electrode and having a contact hole, through which the source region and the base contact layer are exposed; a source electrode coupling with the source region and the base region through the contact hole; a drain electrode on the substrate. The source region and the base contact layer extend along with a second direction perpendicular to the first direction, and are alternately arranged along with the first direction. The contact hole has a longitudinal direction in the first direction.