The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2012
Filed:
Oct. 04, 2004
Nestore Polce, Chelmsford, MA (US);
Ronald P. Clark, Peabody, MA (US);
Nathan Zommer, Los Altos, CA (US);
Nestore Polce, Chelmsford, MA (US);
Ronald P. Clark, Peabody, MA (US);
Nathan Zommer, Los Altos, CA (US);
IXYS Corporation, Milpitas, CA (US);
Abstract
A photovoltaic (PV) cell device comprises a first semiconductor substrate; a second semiconductor substrate bonded to the first semiconductor substrate; an insulating layer provided between the first and second substrates to electrically isolate the first substrate from the second substrate; a plurality of PV cells defined on the first substrate, each PV cell including a n-type region and a p-type region; a plurality of vertical trenches provided in the first substrate to separated the PV cells, the vertical trenches terminating at the insulating layer; a plurality of isolation structures provided within the vertical trenches, each isolation structure including a first isolation layer including oxide and a second isolation layer including polysilicon; and an interconnect layer patterned to connect the PV cells to provide X number of PV cells in series and Y number of PV cells in parallel. The n-type regions are formed by performing ion implantation of arsenic to provide shallow junction depths for the n-type regions, so that PV cell device is optimized for sunlight.