The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2012
Filed:
Nov. 01, 2010
Ying-cheng Chuang, Boise, ID (US);
Hung-ming Tsai, Boise, ID (US);
Sheng-wei Yang, Boise, ID (US);
Ping-cheng Hsu, Boise, ID (US);
Ming-cheng Chang, Boise, ID (US);
Ying-Cheng Chuang, Boise, ID (US);
Hung-Ming Tsai, Boise, ID (US);
Sheng-Wei Yang, Boise, ID (US);
Ping-Cheng Hsu, Boise, ID (US);
Ming-Cheng Chang, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A method of forming a conductive contact includes forming a structure comprising an upper surface joining with a sidewall surface. The sidewall surface contains elemental-form silicon. Silicon is epitaxially grown from the sidewall surface. Dielectric material is formed over the upper surface and the epitaxially-grown silicon. A conductive contact is formed through the dielectric material to conductively connect with the upper surface.