The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2012
Filed:
Jul. 15, 2011
Jun-ho Jeong, Suwon-si, KR;
Jang-eun Lee, Suwon-si, KR;
Woo-jin Kim, Yongin-si, KR;
Hee-ju Shin, Yongin-si, KR;
Yong-hwan Ryu, Yongin-si, KR;
Jun-Ho Jeong, Suwon-si, KR;
Jang-Eun Lee, Suwon-si, KR;
Woo-Jin Kim, Yongin-si, KR;
Hee-Ju Shin, Yongin-si, KR;
Yong-Hwan Ryu, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
An example embodiment relates to a method of forming a pattern structure, including forming an object layer on a substrate, and forming a hard mask on the object layer. A plasma reactive etching process is performed on the object layer using an etching gas including a fluorine containing gas and ammonia (NH) gas together with oxygen gas to form a pattern. The oxygen gas is used for suppressing the removal of the hard mask during the etching process.