The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2012
Filed:
Aug. 22, 2005
Shao Hong Ku, Taipei, TW;
Yin Jen Chen, Taipei County, TW;
Wenpin LU, Hsinchu County, TW;
Tahui Wang, Hsinchu, TW;
Shao Hong Ku, Taipei, TW;
Yin Jen Chen, Taipei County, TW;
Wenpin Lu, Hsinchu County, TW;
Tahui Wang, Hsinchu, TW;
MACRONIX International Co., Ltd., Hsinchu, TW;
Abstract
A multi-bit memory cell includes a substrate; a multi-bit charge-trapping cell over the substrate, the multi-bit charge-trapping cell having a first lateral side and a second lateral side; a source region in the substrate, a portion of the source region being under the first side of the multi-bit charge-trapping cell; a drain region in the substrate, a portion of the drain region being under the second side of the multi-bit charge-trapping cell; and a channel region in the substrate between the source region and the drain region. The channel region has one of a p-type doping and an n-type doping, and the doping is configured to provide a highest doping concentration near the central portion of the channel region.