The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 11, 2012

Filed:

Sep. 21, 2010
Applicants:

Shengwu Chang, South Hamilton, MA (US);

Joseph C. Olson, Beverly, MA (US);

Frank Sinclair, Quincy, MA (US);

Matthew P. Mcclellan, Lancaster, MA (US);

Inventors:

Shengwu Chang, South Hamilton, MA (US);

Joseph C. Olson, Beverly, MA (US);

Frank Sinclair, Quincy, MA (US);

Matthew P. McClellan, Lancaster, MA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/10 (2006.01);
U.S. Cl.
CPC ...
Abstract

A beam line ion implanter includes an ion source configured to generate an ion beam, a scanner configured to scan the ion beam to produce a scanned ion beam having trajectories which diverge from a scan origin, and a focusing element having a focusing field positioned upstream of the scanner configured to focus the ion beam to a focal point at the scan origin. A method of ion beam tuning includes generating an ion beam, focusing the ion beam to a focal point positioned at a scan origin, and scanning the ion beam to produce a scanned ion beam having trajectories which diverge from the scan origin.


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