The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2012
Filed:
Nov. 17, 2009
Ben-li Sheu, Sunnyvale, CA (US);
Martin Shim, Pleasanton, CA (US);
Jonathan Kim, Danville, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method for reducing line width roughness (LWR) of a feature in an etch layer below a patterned photoresist mask having mask features is provided. The method includes (a) non-etching plasma pre-etch treatment of the photoresist mask, and (b) etching of a feature in the etch layer through the pre-treated photoresist mask using an etching gas. The non-etching plasma pre-etch treatment includes (a1) providing a treatment gas containing Hand COS, (a2) forming a plasma from the treatment gas, and (a3) stopping the treatment gas.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile