The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 11, 2012

Filed:

Jul. 02, 2010
Applicant:

Dong LI, Phoenix, AZ (US);

Inventor:

Dong Li, Phoenix, AZ (US);

Assignee:

ASM America, Inc., Phoenix, AZ (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods of forming ruthenium or ruthenium dioxide are provided. The methods may include using ruthenium tetraoxide (RuO) as a ruthenium precursor. In some embodiments for forming ruthenium, methods include forming a seed layer, and forming a ruthenium layer on the seed layer, using RuO. In other embodiments, methods include performing atomic layer deposition cycles, which include using RuOand another ruthenium-containing co-precursor. In yet other embodiments, methods include adsorbing a reducing agent over a substrate, and supplying RuOto be reduced to ruthenium by the adsorbed reducing agent. In other embodiments for forming ruthenium dioxide, methods may include providing an initial seed layer formed of, for example, an organic compound, and supplying RuOover the seed layer.


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