The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2012
Filed:
May. 03, 2012
Natalie Nguyen, San Jose, CA (US);
Paul Wai Kie Poon, Fremont, CA (US);
Steven J. Radigan, Fremont, CA (US);
Michael Konevecki, San Jose, CA (US);
Yung-tin Chen, Santa Clara, CA (US);
Raghuveer Makala, Sunnyvale, CA (US);
Vance Dunton, San Jose, CA (US);
Natalie Nguyen, San Jose, CA (US);
Paul Wai Kie Poon, Fremont, CA (US);
Steven J. Radigan, Fremont, CA (US);
Michael Konevecki, San Jose, CA (US);
Yung-Tin Chen, Santa Clara, CA (US);
Raghuveer Makala, Sunnyvale, CA (US);
Vance Dunton, San Jose, CA (US);
SanDisk 3D LLC, Milpitas, CA (US);
Abstract
A method of making a device includes forming a first photoresist layer over a sacrificial layer, patterning the first photoresist layer to form first photoresist features, rendering the first photoresist features insoluble to a solvent, forming a second photoresist layer over the first photoresist features, patterning the second photoresist layer to form second photoresist features, forming a spacer layer over the first and second photoresist features, etching the spacer layer to form spacer features and to expose the first and second photoresist features, forming third photoresist features between the spacer features, removing the spacer features, and patterning the sacrificial layer using the first, second and third photoresist features as a mask to form sacrificial features.