The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2012
Filed:
Jul. 09, 2009
Ulrich Kretzer, Chemnitz, DE;
Frank Börner, Dresden, DE;
Stefan Eichler, Dresden, DE;
Frieder Kropfgans, Freiberg, DE;
Ulrich Kretzer, Chemnitz, DE;
Frank Börner, Dresden, DE;
Stefan Eichler, Dresden, DE;
Frieder Kropfgans, Freiberg, DE;
Freiberger Compound Materials GmbH, Freiberg, DE;
Abstract
A process is disclosed for producing a doped gallium arsenide single crystal by melting a gallium arsenide starting material and subsequently solidifying the gallium arsenide melt, wherein the gallium arsenide melt contains an excess of gallium relative to the stoichiometric composition, and wherein it is provided for a boron concentration of at least 5×10cmin the melt or in the obtained crystal. The thus obtained crystal is characterized by a unique combination of low dislocation density, high conductivity and yet excellent, very low optic absorption, particularly in the range of the near infrared.