The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2012
Filed:
Dec. 10, 2009
Tadanobu Nagami, Yamato, JP;
Junichi Kobayashi, Ayase, JP;
Takeshi Terada, Tama, JP;
Makoto Watanabe, Yokohama, JP;
Hiroyuki Abo, Tokyo, JP;
Mitsunori Toshishige, Kawasaki, JP;
Yoshinori Tagawa, Yokohama, JP;
Shuji Koyama, Kawasaki, JP;
Kenji Fujii, Hiratsuka, JP;
Masaki Ohsumi, Yokosuka, JP;
Jun Yamamuro, Yokohama, JP;
Hiroyuki Murayama, Kawasaki, JP;
Yoshinobu Urayama, Fujisawa, JP;
Taichi Yonemoto, Isehara, JP;
Tadanobu Nagami, Yamato, JP;
Junichi Kobayashi, Ayase, JP;
Takeshi Terada, Tama, JP;
Makoto Watanabe, Yokohama, JP;
Hiroyuki Abo, Tokyo, JP;
Mitsunori Toshishige, Kawasaki, JP;
Yoshinori Tagawa, Yokohama, JP;
Shuji Koyama, Kawasaki, JP;
Kenji Fujii, Hiratsuka, JP;
Masaki Ohsumi, Yokosuka, JP;
Jun Yamamuro, Yokohama, JP;
Hiroyuki Murayama, Kawasaki, JP;
Yoshinobu Urayama, Fujisawa, JP;
Taichi Yonemoto, Isehara, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
The present invention provides a method for producing a liquid discharge head including a silicon substrate having, on a first surface, energy generating elements, and a supply port penetrating the substrate from the first surface to a second surface, which is a rear surface of the first surface of the substrate. The method includes the steps of: preparing the silicon substrate having a sacrifice layer at a portion on the first surface where the ink supply port is to be formed and an etching mask layer having a plurality of openings on the second surface, the volume of a portion of the sacrifice layer at a position corresponding to a portion between two adjacent said openings being smaller than the volume of a portion of the sacrifice layer at a position corresponding to the opening; etching the silicon substrate from the plurality of openings and etching the sacrifice layer.