The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2012
Filed:
Feb. 11, 2011
Kunliang Zhang, Fremont, CA (US);
Shengyuan Wang, Fremont, CA (US);
Tong Zhao, Fremont, CA (US);
Min LI, Fremont, CA (US);
Hui-chuan Wang, Pleasanton, CA (US);
Kunliang Zhang, Fremont, CA (US);
Shengyuan Wang, Fremont, CA (US);
Tong Zhao, Fremont, CA (US);
Min Li, Fremont, CA (US);
Hui-Chuan Wang, Pleasanton, CA (US);
Headway Technologies, Inc., Milpitas, CA (US);
Abstract
The pinning field in an MR device was significantly improved by using the Ru 4A peak together with steps to minimize interfacial roughness of the ruthenium layer as well as boron and manganese diffusion into the ruthenium layer during manufacturing. This made it possible to anneal at temperatures as high as 340° C. whereby a high MR ratio could be simultaneously achieved.