The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 04, 2012

Filed:

Sep. 30, 2010
Applicants:

Chewn-pu Jou, Hsinchu, TW;

Fu-lung Hsueh, Cranbury, NJ (US);

Sally Liu, Hsinchu, TW;

Inventors:

Chewn-Pu Jou, Hsinchu, TW;

Fu-Lung Hsueh, Cranbury, NJ (US);

Sally Liu, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

A radio frequency amplifier circuit includes a substrate that is capable of receiving a substrate bias voltage. The source of a transistor is capable of receiving a source bias voltage. The drain of the transistor is capable of receiving a drain bias voltage. The gate of the transistor is located between the source and the drain. A radio frequency input signal is coupled to the gate. A substrate bias circuit provides the substrate bias voltage. The substrate bias voltage and the source bias voltage forward bias the first diode formed by the source and the substrate. The substrate bias voltage and the drain bias voltage reverse bias the second diode formed by the drain and the substrate.


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