The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2012
Filed:
Oct. 02, 2008
Hsiang-lan Lung, Elmsford, NY (US);
Chieh-fang Chen, Panchiao, TW;
Yen-hao Shih, Banqiao, TW;
Ming-hsiu Lee, Hsinchu, TW;
Matthew J. Breitwisch, Yorktown Heights, NY (US);
Chung Hon Lam, Peekskill, NY (US);
Frieder H. Baumann, Redbank, NJ (US);
Philip Flaitz, Newburgh, NY (US);
Simone Raoux, Santa Clara, CA (US);
Hsiang-Lan Lung, Elmsford, NY (US);
Chieh-Fang Chen, Panchiao, TW;
Yen-Hao Shih, Banqiao, TW;
Ming-Hsiu Lee, Hsinchu, TW;
Matthew J. Breitwisch, Yorktown Heights, NY (US);
Chung Hon Lam, Peekskill, NY (US);
Frieder H. Baumann, Redbank, NJ (US);
Philip Flaitz, Newburgh, NY (US);
Simone Raoux, Santa Clara, CA (US);
Macronix International Co., Ltd., Hsinchu, TW;
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for manufacturing a memory device, and a resulting device, is described using silicon oxide doped chalcogenide material. A first electrode having a contact surface; a body of phase change memory material in a polycrystalline state including a portion in contact with the contact surface of the first electrode, and a second electrode in contact with the body of phase change material are formed. The process includes melting and cooling the phase change memory material one or more times within an active region in the body of phase change material without disturbing the polycrystalline state outside the active region. A mesh of silicon oxide in the active region with at least one domain of chalcogenide material results. Also, the grain size of the phase change material in the polycrystalline state outside the active region is small, resulting in a more uniform structure.