The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2012
Filed:
Jan. 03, 2012
Kyoung Bong Rouh, Icheon-Si, KR;
Kyoung Bong Rouh, Icheon-Si, KR;
Hynix Semiconductor Inc., Icheon-si, KR;
Abstract
A method of fabricating a landing plug in a semiconductor memory device, which in one embodiment includes forming a landing plug contact hole on a semiconductor substrate having an impurity region to expose the impurity region; forming a landing plug by filling the landing plug contact hole with a polysilicon layer, wherein the landing plug comprises a first region, a second region, a third region, and a fourth region, wherein the first region is disposed beneath the second region and doped with a first doping concentration, the second region is disposed above the first region and below the third region and is not doped, the third region is disposed above the second region and below the fourth region and is doped with a second doping concentration that is lower than the first doping concentration, and the fourth region is disposed above the third region and is doped with a third doping concentration that is higher than the first doping concentration; and annealing the resulting product formed with the landing plug.