The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2012
Filed:
Feb. 17, 2011
Huaxiang Yin, Beijing, CN;
Qiuxia Xu, Beijing, CN;
Gaobo Xu, Beijing, CN;
Lingkuan Meng, Beijing, CN;
Tao Yang, Beijing, CN;
Dapeng Chen, Beijing, CN;
Huaxiang Yin, Beijing, CN;
Qiuxia Xu, Beijing, CN;
Gaobo Xu, Beijing, CN;
Lingkuan Meng, Beijing, CN;
Tao Yang, Beijing, CN;
Dapeng Chen, Beijing, CN;
Abstract
A method for manufacturing a semiconductor device includes the steps of: forming a first gate stack on a semiconductor substrate, the first gate stack includes a first gate conductor and a first gate dielectric between the first gate conductor and the semiconductor substrate; forming source/drain regions on the semiconductor substrate; forming a multilayer structure including at least one sacrificial layer and at least one insulating layer under the sacrificial layer on the semiconductor substrate and the first gate stack; performing a first RIE on the multilayer structure; performing a second RIE on the multilayer structure; selectively etching the first gate stack with respect to the insulating layer, in which the first gate conductor is removed and an opening is formed in the insulating layer; and forming a second gate conductor in the opening.