The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 04, 2012

Filed:

Mar. 22, 2007
Applicants:

Wen Shi, Shanghai, CN;

Wei Wei Ruan, Shanghai, CN;

Inventors:

Wen Shi, Shanghai, CN;

Wei Wei Ruan, Shanghai, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 31/26 (2006.01);
U.S. Cl.
CPC ...
Abstract

Embodiments in accordance with the present invention relate to structures and methods allowing stress-induced electromigration to be tested in multiple interconnect metallization layers. An embodiment of a testing structure in accordance with the present invention comprises at least two segments of a different metal layer through via structures. Each segment includes nodes configured to receive force and sense voltages. Selective application of force and sense voltages to these nodes allows rapid and precise detection of stress-induced immigration in each of the metal layers.


Find Patent Forward Citations

Shi, Wen. (2012). Reliability test structure for multilevel interconnect (U.S. Patent No. 8323990). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8323990

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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